Comparative analysis of gate-oxide engineering in charge plasma based nanowire transistor
نویسندگان
چکیده
Abstract In this work, a hetero-gate-oxide charge plasma-based nanowire transistor (HGO-CPNWT) has been proposed, characterized, and comparative analysis with the conventional (CCPNWT) Stack-Gate-Oxide CPNWT (SGO-CPNWT) investigated. The effects of stacking high- κ gate oxide low- beneath segmenting at source side drain have analyzed short channel (SCEs) parameters radio-frequency (RF)/analog figure merits. HGO-CPNWT demonstrates enhanced performances in terms I on /I off 1.66 × 10 8 , subthreshold slope (SS) 65.74 mV/decade, induced barrier lowering (DIBL) 47.857 mV/V, peak transconductance (g m ) 3.43 −5 S/ μ m, cut-off frequency (f t 114 GHz. simulation employs comprehensive quantum transport model, impacts adjusting length (L g ), radius (r), thickness (T ox are studied.
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ژورنال
عنوان ژورنال: Engineering research express
سال: 2023
ISSN: ['2631-8695']
DOI: https://doi.org/10.1088/2631-8695/acea1c